Search results for "static and dynamic mode testing"

showing 3 items of 3 documents

Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

2016

International audience; The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.

ImaginationNuclear and High Energy PhysicsHeavy ion radiationMaterials science130 nmmedia_common.quotation_subject[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]01 natural sciencesFluence[SPI]Engineering Sciences [physics]0103 physical sciencesStatic testingSensitivity (control systems)Electrical and Electronic Engineeringradiation testingSimulationmedia_common010302 applied physicssingle event upset (SEU)ta114ta213010308 nuclear & particles physicsbusiness.industrymultiple cell upset (MCU)FerroelectricityNon-volatile memoryRadiation testingFRAM130nm technologyNuclear Energy and EngineeringOptoelectronicsbusinessstatic and dynamic mode testingIEEE Transactions on Nuclear Science
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Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions

2015

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.

Ionizing radiation[PHYS]Physics [physics]010302 applied physicsRandom access memoryMaterials scienceHeavy ion radiationta114ta213010308 nuclear & particles physics01 natural sciencestest conditions[SPI.TRON]Engineering Sciences [physics]/ElectronicsNon-volatile memoryMultiple Cell Upset (MCU)FRAM0103 physical sciencesStatic testingElectronic engineeringSensitivity (control systems)radiation testing130nmSingle Event Upset (SEU)static and dynamic mode testingSimulation
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SEE on Different Layers of Stacked-SRAMs

2015

International audience; This paper presents heavy-ion and proton radiation test results of a 90 nm COTS SRAM with stacked structure. Radiation tests were made using high penetration heavy-ion cocktails at the HIF (Belgium) and at RADEF (Finland) as well as low energy protons at RADEF. The heavy-ion SEU cross-section showed an unusual profile with a peak at the lowest LET (heavy-ion with the highest penetration range). The discrepancy is due to the fact that the SRAM is constituted of two vertically stacked dice. The impact of proton testing on the response of both stacked dice is presented. The results are discussed and the SEU cross-sections of the upper and lower layers are compared. The …

Nuclear and High Energy PhysicsSEE rateMaterials scienceProtonDiceRadiationLow energyProton radiation90 nmElectronic engineering90 nmStatic random-access memoryElectrical and Electronic Engineeringradiation testingstacked dice[PHYS]Physics [physics]single event upset (SEU)ta213ta114business.industrymultiple cell upset (MCU)SRAM[SPI.TRON]Engineering Sciences [physics]/ElectronicsRadiation testingNuclear Energy and EngineeringOptoelectronicsbusinessstatic and dynamic mode testingIEEE Transactions on Nuclear Science
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